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Bi$_{2}$Te$_{2.4}$Se$_{0.6}$ single crystals show gapless topological surfacestates and doping with Vanadium allows to shift the chemical potential in thebulk band gap. Accordingly, the resistivity, carrier density, and mobility areconstant below 10 K and the magnetoresistance shows weak antilocalization asexpected for low-temperature transport properties dominated by gapless surfacestates of so-called three-dimensional topological "insulators". However, themagnetoresistance also shows a hysteresis depending on the sweep rate and themagnetic field direction. Here, we provide evidence forBi$_{2-x}$Te$_{2.4}$Se$_{0.6}$ single crystals with concentrations $x$ = 0,0.015 and 0.03 of Vanadium, that such magnetoresistance hysteresis is enhancedif both, three-dimensional bulk states and quasi-two-dimensional topologicalstates contribute to the transport ($x$ = 0 and 0.03), and it is mostlysuppressed if the topological states govern transport ($x$ = 0.015). Theresults are discussed in terms of spin-dependent scattering between thedifferent available states.

Low-temperature magnetoresistance hysteresis in Vanadium-doped Bi$_{2}$Te$_{2.4}$Se$_{0.6}$ bulk topological insulators