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The spontaneous emission of light in semiconductors is due to the excitonicrelaxation process. The emission of light requires a change in the transitiondipole matrix of the system. This is captured in terms of the physical quantitycalled transition dipole moment. The transition dipole moment (TDM)characterizes the line strength of the emission process. TDM is of fundamentalimportance in emitter-cavity interaction as its magnitude decides theinteraction strength of emitters and cavities. In all light emitting devices,the orientation of the transition dipole moments is directly related to theoptical power output of the devices. In this manuscript, the basic framework ofspontaneous emission and Einstein coefficients is discussed for two levelsystems. Semiconducting alloyed quantum dots (AQDs) are synthesized inhydrophobic phase. AQDs are used as the experimental two level system. The AQDsare then self-assembled into monolayers by the Langmuir-Schaefer method. Theensemble averaged TDM magnitude and orientation of AQDs are extracted from thetime resolved and the angle resolved emission spectroscopy measurementsrespectively. The procedure for finding out the TDM, described in thismanuscript is generalized. The mentioned procedure can be extended to anyemitters in hydrophobic phase.

Determination of the ensemble transition dipole moments of  self-assembled quantum dot films by time and angle resolved emission  spectroscopy measurements