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Spin defects in hexagonal Boron Nitride (hBN) attract increasing interest forquantum technology since they represent optically-addressable qubits in a vander Waals material. In particular, negatively-charged boron vacancy centers(${V_B}^-$) in hBN have shown promise as sensors of temperature, pressure, andstatic magnetic fields. However, the short spin coherence time of this defectcurrently limits its scope for quantum technology. Here, we apply dynamicaldecoupling techniques to suppress magnetic noise and extend the spin coherencetime by nearly two orders of magnitude, approaching the fundamental $T_1$relaxation limit. Based on this improvement, we demonstrate advanced spincontrol and a set of quantum sensing protocols to detect electromagneticsignals in the MHz range with sub-Hz resolution. This work lays the foundationfor nanoscale sensing using spin defects in an exfoliable material and opens apromising path to quantum sensors and quantum networks integrated intoultra-thin structures.

Extending the coherence time of spin defects in hBN enables advanced qubit control and quantum sensing