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The cross-over from quasi-two- to quasi-one-dimensional electron transportsubject to transverse electric fields and perpendicular magnetic fields arestudied in the diffusive to quasi-ballistic and zero-field to quantum Hallregime. In-plane gates and Hall-bars have been fabricated from anInGaAs/InAlAs/InAs quantum well hosting a 2DEG with carrier density of about6.8$\times$10$^{11}$ cm$^{-2}$, mobility of 1.8$\times$10$^5$ cm$^2$/Vs and aneffective mass of 0.042$m_e$ after illumination. Magnetotransport measurementsat temperatures down to 50 mK and fields up to 12 T yield a high effectiveLand\'e-factor of |g$^*$| = 16, enabling the resolution of spin-split subbandsat magnetic field of 2.5 T. In the quantum Hall regime, electrostatic controlof an effective constriction width enables steering of the reflection andtransmission of edge channels, allowing a separation of fully spin-polarizededge channels at filling factors ${\nu}$ = 1 und ${\nu}$ = 2. A change in theorientation of a transverse in-plane electric field in the constriction shiftsthe transition between Zeeman-split quantum Hall plateaus by ${\Delta}$B$\approx$ 0.1 T and is consistent with an effective magnetic field of B$_{eff}$$\approx$ 0.13 T by spin-dependent backscattering, indicating a change in thespin-split density of states.

In-plane electric field induced shift of spin-dependent resistivity at transitions between quantum Hall plateaus in InAs-based quantum well