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We report the growth of epitaxial LaInO3 on DyScO3(110) substrates byadsorption-controlled plasma-assisted molecular beam epitaxy (PA-MBE). Theadsorption-controlled growth was monitored using line-of-sight quadrupole massspectrometry. In a thermodynamics of MBE (TOMBE) diagram, the experimentalgrowth window was found to be significantly narrower than the predicted one. Wefound the critical thickness for strain relaxation of the LaInO3 layer (latticemismatch $\approx$ -4$\%$) to be of 1 nm using in-situ RHEED analysis.Substrate and film possess an orthorhombic crystal structure which can beapproximated by a pseudo-cubic lattice. X-ray-diffraction (XRD) analysisrevealed the pseudo-cube-on-pseudo-cube epitaxial relationship ofthe LaInO3films to the DyScO3 substrates. This relation was confirmed by transmissionelectron microscopy (TEM), which further resolved the presence of rotationalorthorhombic domains - the majority of which have coinciding c-axis with thatof the substrate. Raman spectroscopy further confirmed the presence of a LaInO3layer. Our findings open up the possibility for 2-dimensional electron gases atthe MBE-grown heterointerface with BaSnO3.

Adsorption-controlled plasma-assisted molecular beam epitaxy of LaInO3 on DyScO3(110): Growth window, strain relaxation, and domain pattern