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The interest in the ferroelectric non-volatile memory as a candidate for lowpower consumption electronic memories was raised after the discovery offerroelectricity in hafnium oxide. Doping by different elements of hafnia filmsallows improving their ferroelectric properties. In this work, the transportexperiments are combined with the simulations to study the evolution offerroelectric properties and the mean distance between oxygen vacancies duringthe endurance of hafnium-zirconium oxide in metal-ferroelectric-metalstructures to study the impact of different metal electrodes.

Changing the properties of Hf$_{0.5}$Zr$_{0.5}$O$_{2}$ during cyclic repolarization of ferroelectric capacitors with different electrode materials