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Silicon vacancies in silicon carbide (SiC) have been proposed as interestingcandidates for quantum technology applications such as quantum sensing andquantum repeaters. SiC exists in many polytypes with different plane stackingsequences, and in each polytype, the vacancies can occupy a variety ofdifferent lattice sites. In this work, we characterize and identify the threemost important charged silicon vacancies in the 6H-SiC polytype. We record thephotoluminescence and continuous-wave optically detected magnetic resonancespectra at different radio-frequency power levels and different temperatures.We individually select the zero-phonon lines of the different silicon vacanciesat low temperatures and record the corresponding optically detected magneticresonance (ODMR) spectra. ODMR allows us to correlate optical and magneticresonance spectra and thereby resolve a controversy from earlier work.

Identification of different silicon vacancy centers in 6H-SiC