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Strong second harmonic generation (SHG) in silicon nitride has beenextensively studied-among others, in terms of laser-induced SHG enhancement inSi3N4 waveguides. This enhancement has been ascribed to the all-optical polinginduced by the coherent photogalvanic effect. Yet, an analogous process forSi3N4 thin films has not been reported. Our article reports on the observationof laser-induced 3-fold SHG enhancement in Si3N4 thin films. The observedenhancement has many features similar to all-optical poling, such as highlynonlinear power dependence, cumulative effect, or connection to the Si3N4-Siinterface. However, identical experiments for low-oxygen silicon oxynitridethin films lead to complex behavior, including laser-induced SHG reduction. Bya thorough experimental study, the observed results were ascribed toheat-induced SHG variation caused by multiphoton absorption. Such behaviorindicates that the origin of optically-induced SHG enhancement in SiOxNy-Sistructures can be a complex interplay of various phenomena.

Optically enhanced second harmonic generation in silicon oxynitride thin films via local layer heating