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The field-free spin-orbit torque induced 180{\deg} reorientation ofperpendicular magnetization is beneficial for the high performance magneticmemory. The antiferromagnetic material (AFM) can provide higher operation speedthan the ferromagnetic counterpart. In this paper, we propose a trilayerAFM/Insulator/Heavy Metal structure as the AFM memory device. We show that thefield-free switching of the AFM with perpendicular N\'eel vector can beachieved by using two orthogonal currents, which provide the uniformdamping-like torque and stagger field-like torque, respectively. The reversibleswitching can be obtained by reversing either current. A current density of1.79 10^11A/m^2 is sufficient to induce the switching. In addition, the twomagnetic moments become noncollinear during the switching. This enables anultrafast switching within 40 picoseconds. The device and switching mechanismproposed in this work offer a promising approach to deterministically switchthe AFM with perpendicular N\'eel vector. It can also stimulate the developmentof ultrafast AFM-based MRAM.

Field-free spin-orbit torque switching of an antiferromagnet with perpendicular N\'eel vector