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The use of the Silicon-on-Insulator (SOI) platform has been prominent forrealizing CMOS-compatible, high-performance photonic integrated circuits(PICs). But in recent years, the silicon-nitride-on-silicon-dioxide(SiN-on-SiO$_2$) platform has garnered increasing interest as an alternative tothe SOI platform for realizing high-performance PICs. This is because of itsseveral beneficial properties over the SOI platform, such as low opticallosses, high thermo-optic stability, broader wavelength transparency range, andhigh tolerance to fabrication-process variations. However, SiN-on-SiO$_2$ basedactive devices such as modulators are scarce and lack in desired performance,due to the absence of free-carrier based activity in the SiN material and thecomplexity of integrating other active materials with SiN-on-SiO$_2$ platform.This shortcoming hinders the SiN-on-SiO$_2$ platform for realizing active PICs.To address this shortcoming, we demonstrate a SiN-on-SiO$_2$ microringresonator (MRR) based active modulator in this article. Our designed MRRmodulator employs an Indium-Tin-Oxide (ITO)-SiN-ITO thin-film stack, in whichthe ITO thin films act as the upper and lower claddings of the SiN MRR. TheITO-SiN-ITO thin-film stack leverages the free-carrier assisted, high-amplituderefractive index change in the ITO films to effect a large electro-refractiveoptical modulation in the device. Based on the electrostatic, transient, andfinite difference time domain (FDTD) simulations, conducted using photonicsfoundry-validated tools, we show that our modulator achieves 280 pm/V resonancemodulation efficiency, 67.8 GHz 3-dB modulation bandwidth, $\sim$19 nmfree-spectral range (FSR), $\sim$0.23 dB insertion loss, and 10.31 dBextinction ratio for optical on-off-keying (OOK) modulation at 30 Gb/s.

A Silicon Nitride Microring Based High-Speed, Tuning-Efficient, Electro-Refractive Modulator