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The coupled spin-valley physics in transition metal dichalcogenides (TMDs)endows exciton states with valley degrees of freedom, making them promising forvalleytronic applications in TMDs monolayers and/or their heterostructures.Although the valley dynamics of intralayer and interlayer excitons (IXs) havebeen studied, efficient manipulation of valley pseudospins by switching excitonstates remains elusive. Therefore, it is of great importance to effectivelytune the exciton states to obtain practical valley polarization switches forvalley encoding. Here, we demonstrate the electrical switching of excitonemission with highly variable valley polarization mediated by charged IXs(CIXs) in the heterostructure of monolayer WS2 and two-dimensional (2D)perovskite, irrespective of lattice constants, the rotational and translationalalignment. The formation of IXs is identified by photoluminescence excitation(PLE) and photoluminescence (PL) studies, which can be further electricallytuned from positively charged to negatively charged depending on theelectrostatic doping level of monolayer WS2. Importantly, we demonstrate anelectrical switching from type two to type one band alignment, manifesting as achange in the PL profile from CIX to charged intralayer exciton emission. Suchtransition induces a large contrast in valley polarization between the twoexciton states, enabling the reversible electrically regulated valleypolarization switch with a maximum ON/OFF ratio of 15.8. Our study provides analternative mechanism to achieve valley polarization switching with greatsimplicity for valleytronics and the electrical control of exciton species andassociated valley-contrasting physics would further facilitate the developmentof optoelectronic and valleytronic devices

Efficient electrical switching of exciton states for valley contrast manipulation in two-dimensional perovskite/monolayer WS2 heterostructures