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Emergent quantum phenomena in two-dimensional van der Waal (vdW) magnets arelargely governed by the interplay between the exchange and Coulombinteractions. The ability to tune the Coulomb interaction in such stronglycorrelated materials enables the precise control of spin-correlated flat-bandstates, bandgap (Eg) and unconventional magnetism, all of which are crucial fornext-generation spintronics and magnonics applications. Here, we demonstrate agiant gate-tunable renormalization of spin-correlated flat-band states andbandgap in magnetic chromium tribromide (CrBr3) monolayers grown on graphene.Our gate-dependent scanning tunneling spectroscopy (STS) studies reveal thatthe inter-flat-band spacing and bandgap of CrBr3 can be continuously tuned by120 meV and 240 meV respectively via electrostatic injection of carriers intothe hybrid CrBr3/graphene system, equivalent to the modulation of the Cron-site Coulomb repulsion energy by 500 meV. This can be attributed to theself-screening of CrBr3 arising from the gate-induced carriers injected intoCrBr3, which dominates over the opposite trend from the remote screening of thegraphene substrate. Precise tuning of the spin-correlated flat-band states andbandgap in 2D magnets via electrostatic modulation of Coulomb interactions notonly provides new strategies for optimizing the spin transport channels butalso may exert a crucial influence on the exchange energy and spin-wave gap,which could raise the critical temperature for magnetic order.

Giant gate-tunable renormalization of spin-correlated flat-band states and bandgap in a 2D magnetic insulator