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We demonstrate a new substrate cleaning and buffer growth scheme in$\beta$-Ga$_2$O$_3$ epitaxial thin films using metalorganic vapor phase epitaxy(MOVPE). For the channel structure, a low-temperature (LT, 600 $^\circ$C)undoped Ga$_2$O$_3$ buffer is grown followed by transition layers to ahigh-temperature (HT, 810 $^\circ$C) Si-doped Ga$_2$O$_3$ channel layerswithout growth interruption. The (010) Ga$_2$O$_3$ Fe-doped substrate cleaninguses solvent cleaning followed by an additional HF (49% in water) treatment for30 mins before the epilayer growth. This step is shown to compensate theparasitic Si channel at the epilayer-substrate interface that originates fromthe substrate polishing process or contamination from the ambient. SIMSanalysis shows the Si peak atomic density at the substrate interface is severaltimes lower than the Fe atomic density in the substrate - indicating fullcompensation. The elimination of the parasitic electron channel at theepi-substrate interface was also verified by electrical (capacitance-voltageprofiling) measurements. In the LT-grown buffer layers, it is seen that the Feforward decay tail from the substrate is very sharp with a decay rate of $\sim$9 nm$/$dec. These channels show record high electron mobility in the range of196 - 85 cm$^2$/Vs in unintentionally doped and Si-doped films in the dopingrange of 2$\times$10$^{16}$ to 1$\times$10$^{20}$ cm$^{-3}$. Si delta-dopedchannels were also grown utilizing this substrate cleaning and the hybridLT-buffers. Record high electron Hall mobility of 110 cm$^2$/Vs was measuredfor sheet charge density of 9.2$\times$10$^{12}$ cm$^{-2}$. This substratecleaning combined with the LT-buffer scheme shows the potential of designingSi-doped $\beta$-Ga$_2$O$_3$ channels with exceptional transport properties forhigh performance gallium oxide-based electron devices.

Enhancing the Electron Mobility in Si-doped (010) $\beta$-Ga$_2$O$_3$ films with Low-Temperature Buffer Layers