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The electronic transport properties of Janus monolayer black arsenicphosphorus (b-AsP) nanoribbons have been investigated utilizing thetight-binding approach. The dependence of electronic structure on edgestructures is systematically investigated. (1,3)nb and (3,1)nb b-AsPnanoribbons exhibit flatter edge bands than zigzag and armchair counterparts.The edge band of the armchair ones show double degeneracy. Further, thecalculated results show the band gap of the zigzag ribbon with differentboundary morphology is widely tunable by transverse electric field. A criticalelectric field can fully close the gap and induce a phase transition from asemiconductor into a conductor. Our work suggests dynamically tunable bandgapin Janus b-AsP nanoribbons and reveals the potential of Janus b-AsP fortransmission devices.

Electronic properties of Janus black arsenic-phosphorus (b-AsP) nanoribbons under transverse electric field