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In this paper, we report on the method of nondestructive quality control thatcan be used in fabrication of GaAs high-speed electronics. The method relies onthe surface potential mapping and enables rigid in vivo analysis of transportproperties of an active electronic device incorporated into a complexintegrated circuit. The study is inspired by our ongoing development of amillimeter wave intelligent reflective surface for 6G communications. Toprovide desired beamforming capabilities, such a surface should utilizehundreds of identical microscale GaAs diode switches with series resistance ofa few ohms. Thus, we develop a ladder-like layered ohmic contact to heavilySi-doped GaAs and cross-study it via transmission line method and Kelvin probeforce microscopy. The contact resistivity as low as 0.15~$\mu \Omega \,$cm$^2$is measured resulting in only a 0.6~$\Omega$ of resistance for the contact areaof 3$\times$3~$\mu$m$^2$. Moreover, the tendencies observed suggest that onecan rigidly analyze the evolution of contact resistance and the profile ofresistivity under contact in response to rapid thermal annealing, once thesurface potential map across the ``ladder'' is known.

Nondestructive KPFM-assisted Quality Control in Fabrication of GaAs High-Speed Electronics