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Thermal transient measurement based on source-drain voltage is a standardmethod to characterize thermal properties of silicon semiconductors but isdoubtful to be directly applied to silicon carbide (SiC) devices. To evaluateits feasibility and limitations, this paper conducts a comprehensiveinvestigation into its accuracy, resolution, and stability towards yielding thestructure information of SiC MOSFET using the source-drain voltage as thetemperature sensitive electrical parameter. The whole characterization processinvolves two main procedures and associated key testing parameters, such asgate voltages, sensing and heating currents, etc. Their impacts on both thestatic and dynamic performances are also investigated with the aim of providinga guideline for conducting a reproducible thermal transient measurement for SiCMOSFETs.

A Guideline for Silicon Carbide MOSFET Thermal Characterization based on Source-Drain Voltage