English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

The Moore's law in the semiconducting industry has faltered as thethree-dimensional (3D) Si-based transistors has approached their physical limitwith the downscaling. The carrier mobility $\rm \mu $, critical to the device'sperformance, will be degraded when the thickness of Si is scaled into severalnanometers. In contrast to the bulk counterpart, two-dimensional (2D)semiconductors can be scaled into atomic-layer thickness without danglingbonds, maintaining its intrinsic carrier mobility and going beyond the limitsof Si-based electronics. Hence, the development of novel 2D semiconductingmaterials with high carrier mobility is the market demand as well as thescientific challenge. Here, we successfully designed 2D $\rm{Be_{3}B_{2}C_{3}}$ with planar hypercoordinate motif. It possesses the perfectplanar skeleton with both pentacoordinate carbon and hexacoordinate boronmoieties, which is the first reported material with such multi-hypercoordinatecenters. Density functional theory (DFT) calculations prove that the $\rm{Be_{3}B_{2}C_{3}}$ monolayer has excellent structural and thermal stabilitiesas well as mechanical properties. Further investigations reveal that the $\rm{Be_{3}B_{2}C_{3}}$ monolayer has a strong ultrahigh Fermi velocity ($\rm 2.7\times 10^{5} m/s$), suitable direct bandgap (1.97 eV), and high opticalabsorption coefficient ($\rm 10^{5}$). As a result, an unprecedented ultrahighroom-temperature carrier mobility ($\rm 8.1 \times 10^{5} cm^{2}V^{-1}s^{-1}$)with strong anisotropy is discovered, making $\rm {Be_{3}B_{2}C_{3}}$ monolayera revolutionary candidate for future electronic and photovoltaic applications.

2D $\rm\bf {Be_{3}B_{2}C_{3}}$:a stable direct-bandgap semiconductor  with record-breaking carrier mobility, $\rm\bf 8.1 \times 10^{5}  cm^{2}V^{-1}s^{-1}$