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We report on resistive switching (RS) characteristics of W/WO3-x/Pt-basedthin film memristors modulated by precisely controlled oxygennon-stoichiometry. RS properties of the devices with varied oxygen vacancy (VO)concentration have been studied by measuring their DC current voltageproperties. Switchability of the resistance states in the memristors have beenfound to depend strongly on the VOs concentration in the WO3-x layer. Dependingon x, the memristors exhibited forming-free bipolar, forming-required bipolarand non-formable characteristics. Devices with high VOs concentration (~1*1021cm-3) exhibited lower initial resistance and memory window of only 15, whichhas been increased to ~6500 with reducing VOs concentration to ~5.8*1020 cm-3.Forming-free, stable RS with memory window of ~2000 have been realized for amemristor possessing VOs concentration of ~6.2*1020 cm-3. Investigation of theconduction mechanism suggests that tailoring VOs concentration modifies theformation and dimension of the conducting filaments as well as the Schottkybarrier height at WO3-x/Pt interface which deterministically modulates RScharacteristics of the WO3-x based memristors.

Evolution of Resistive Switching Characteristics in WO3-x-based MIM Devices by Tailoring Oxygen Deficiency