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To achieve thermoelectric energy conversion, a large transversethermoelectric effect in topological materials is crucial. However, the generalrelationship between topological electronic structures and transversethermoelectric effect remains unclear, restricting the rational design of noveltransverse thermoelectric materials. Herein, we demonstrate a topologicaltransition-induced giant transverse thermoelectric effect in polycrystallineMn-doped Mg3+{\delta}Bi2 material, which has a competitively large transversethermopower (617 uV/K), power factor (20393 uWm-1K-2), magnetoresistance(16600%), and electronic mobility (35280cm2V-1S-1). The high performance istriggered by the modulation of chemical pressure and disorder effects in thepresence of Mn doping, which induces the transition from a topologicalinsulator to a Dirac semimetal. The high-performance polycrystalline Mn-dopedMg3+{\delta} Bi2 described in this work robustly boosts transversethermoelectric effect through topological phase transition, paving a new avenuefor the material design of transverse thermoelectricity.

A topological transition-induced giant transverse thermoelectric effect in polycrystalline Dirac semimetal Mg3Bi2