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The Two Photon Absorption - Transient Current Technique (TPA-TCT) was used toinvestigate a silicon strip detector with illumination from the top.Measurement and analysis techniques for the TPA-TCT of segmented devices arepresented and discussed using a passive strip CMOS detector as an example. Theinfluence of laser beam clipping and reflection is shown and a method thatallows to compensate these intensity related effects for the investigation ofthe electric field is introduced and successfully employed. Besides, the mirrortechnique is introduced, which exploits reflection at a metallised back side toenable the measurement directly below a top metallisation, while illuminatingfrom the top.

Techniques for the investigation of segmented sensors using the Two Photon Absorption -- Transient Current Technique