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The subthreshold leakage current in transistors has become a criticallimiting factor for realizing ultra-low-power transistors. The leakage currentis predominantly dictated by the long thermal tail of the charge carriers. Wepropose a solution to this problem by using narrow bandwidth semiconductors forlimiting the thermionic leakage current by filtering out the high energycarriers. We specifically demonstrate this solution in transistors withlaterally confined monolayer MoSi2N4 with different passivation serving aschannel material. Remarkably, we find that the proposed narrow bandwidthdevices can achieve a large ON/OFF current ratio with an ultra-low-power supplyvoltage of 0.1 V, even for devices with a 5 nm gate length. We also show thatseveral other materials share the unique electronic properties of narrowbandwidth conduction and valance bands in the same series.

Designing power efficient transistors using narrow bandwidth materials from the MA2Z4 monolayer series