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We investigate the full and half-shells of Pb(1-x)Sn(x)Te topologicalcrystalline insulator deposited by molecular beam epitaxy on the sidewalls ofwurtzite GaAs nanowires (NWs). Due to the distinct orientation of the IV-VIshell with respect to the III-V core the lattice mismatch along the nanowireaxis is less than 4%. The Pb(1-x)Sn(x)Te solid solution is chosen due to thetopological crystalline insulator properties for some critical concentrationsof Sn (x >= 0.4). The IV-VI shells are grown with different compositionsspanning from binary SnTe, through Pb(1-x)Sn(x)Te with decreasing x value downto binary PbTe (x = 0). The samples are analyzed by scanning transmissionelectron microscopy, which reveals the presence of (110) or (100) orientedbinary PbTe and (100)Pb(1-x)Sn(x)Te on the sidewalls of wurtzite GaAs NWs.

Nearly Lattice Matched GaAs/Pb(1-x)Sn(x)Te Core-Shell Nanowires