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Voltage-induced dynamic switching in magnetic tunnel junctions (MTJs) is awriting technique for voltage-controlled magnetoresistive random access memory(VCMRAM), which is expected to be an ultimate non-volatile memory withultra-low power consumption. In conventional dynamic switching, the width ofsub-nanosecond write voltage pulses must be precisely controlled to achieve asufficiently low write-error rate (WER). This very narrow tolerance of pulsewidth is the biggest technical difficulty in developing VCMRAM. Heavily dampedprecessional switching is a writing scheme for VCMRAM with a substantially hightolerance of pulse width although the minimum WER has been much higher thanthat of conventional dynamic switching with an optimum pulse width. In thisstudy, we theoretically investigate the effect of MTJ shape and the directionof the applied magnetic field on the WER of heavily damped precessionalswitching. The results show that the WER in elliptical-cylinder MTJ can beseveral orders of magnitude smaller than that in usual circular-cylinder MTJwhen the external magnetic field is applied parallel to the minor axis of theellipse. The reduction in WER is due to the fact that the demagnetization fieldnarrows the component of the magnetization distribution perpendicular to theplane direction immediately before the voltage is applied.

Heavily Damped Precessional Switching with Very Low Write-error Rate in Elliptical-cylinder Magnetic Tunnel Junction