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The high luminosity upgrade of the LHC will provide unique physicsopportunities, such as the observation of rare processes and precisionmeasurements. However, the accompanying harsh radiation environment will alsopose unprecedented challenged to the detector performance and hardware. In thispaper, we study the radiation induced damage and its macroscopic isothermalannealing behaviour of the bulk material from new 8" silicon wafers using diodetest structures. The sensor properties are determined through measurements ofthe diode capacitance and leakage current for three thicknesses, two materialtypes, and neutron fluences from $6.5\cdot 10^{14}$ to$10^{16}\,\mathrm{neq/cm^2}$.

Isothermal annealing of radiation defects in bulk material of diodes from 8" silicon wafers