English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Nanobelts, nanoribbons and other quasi-one-dimensional nanostructures formedfrom layered, so-called, van der Waals semiconductors have garnered muchattention due to their high-performance, tunable optoelectronic properties. Forlayered alloys made from the gallium monochalcogenides GaS, GaSe, and GaTe,near-continuous tuning of the energy bandgap across the full composition rangehas been achieved in GaSe1-xSx and GaSe1-xTex alloys. Gold-catalyzedvapor-liquid-solid (VLS) growth of these alloys yields predominantly nanobelts,nanoribbons and other nanostructures for which the fast crystal growth frontconsists of layer edges in contact with the catalyst. We demonstrate that inthe S-rich, GaS1-xTex system, unlike GaSe1-xSx and GaSe1-xTex, the Au-catalyzedVLS process yields van der Waals nanowires for which the fast growth directionis normal to the layers. The high mismatch between S and Te leads toextraordinary bowing of the GaS1-xTex alloy's energy bandgap, decreasing by atleast 0.6 eV for x as small as 0.03. Calculations using density functionaltheory confirm the significant decrease in bandgap in S-rich GaS1-xTex. Thenanowires can exceed fifty micrometers in length, consisting of tens ofthousands of van der Waals-bonded layers with triangular or hexagonalcross-sections of uniform dimensions along the length of the nanowire. Wepropose that the low solubility of Te in GaS results in an enhancement in Tecoverage around the Au catalyst-nanowire interface, confining the catalyst tothe chalcogen-terminated basal plane (rather than the edges) and therebyenabling layer-by-layer, c-axis growth.

Vapor-liquid-solid growth of highly-mismatched semiconductor nanowires with high-fidelity van der Waals layer stacking