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Strain engineering is a vital way to manipulate the electronic properties oftwo-dimensional (2D) materials. As a typical representative of transition metalmono-chalcogenides (TMMs), a honeycomb CuSe monolayer features withone-dimensional (1D) moir\'e patterns owing to the uniaxial strain along one ofthree equivalent orientations of Cu(111) substrates. Here, by combininglow-temperature scanning tunneling microscopy/spectroscopy (STM/S) experimentsand density functional theory (DFT) calculations, we systematically investigatethe electronic properties of the strained CuSe monolayer on the Cu(111)substrate. Our results show the semiconducting feature of CuSe monolayer with aband gap of 1.28 eV and the 1D periodical modulation of electronic propertiesby the 1D moir\'e patterns. Except for the uniaxially strained CuSe monolayer,we observed domain boundary and line defects in the CuSe monolayer, where thebiaxial-strain and strain-free conditions can be investigated respectively. STSmeasurements for the three different strain regions show that the first peak inconduction band will move downward with the increasing strain. DFT calculationsbased on the three CuSe atomic models with different strain inside reproducedthe peak movement. The present findings not only enrich the fundamentalcomprehension toward the influence of strain on electronic properties at 2Dlimit, but also offer the benchmark for the development of 2D semiconductormaterials.

Electronic properties of monolayer copper selenide with one-dimensional moir\'e patterns