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Magnetic tunnel junction (MTJ) based on van der Waals (vdW) magnetic layershas been found to present excellent tunneling magnetoresistance (TMR) property,which has great potential applications in field sensing, non-volatile magneticrandom access memories, and spin logics. Although MTJs composed of multilayervdW magnetic homojunction have been extensively investigated, the ones composedof vdW magnetic heterojunction is still to be explored. Here we usefirst-principles approaches to reveal that the magnetic heterojunction MTJshave much more distinguishable TMR values than the homojunction ones. In theMTJ composed of bilayer CrI3/bilayer Cr2Ge2Te6 heterojunction, we find thereare eight stable magnetic states, leading to six distinguishable electronicresistances. As a result, five sizable TMRs larger than 300% can be obtained(the maximum TMR is up to 620,000%). Six distinguishable memories are obtainedwhich is two times larger than that of a four-layered homojunction MTJ. Theunderlying relationships among magnetic state, spin-polarized band structures,and transmission spectrums are further revealed to explain the multiple TMRvalues. We also find that the magnetic states and thus TMRs can be efficientlymodulated by an external electric field. This study opens an avenue to thedesign of high-performance MTJ devices based on vdW heterojunctions.

Electric field tunable multi-state tunnel magnetoresistances in 2D van der Waals magnetic heterojunctions