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We report a strategy to design nanoscale cold-source field-effect transistors(CS-FETs) with bias-independent sub-60 mV/dec subthreshold swing (SS). Byfirst-principles calculations and quantum-transport simulations, we reveal thatthe energy alignment of density of states (DOS) between the drain and sourceelectrodes is critical to achieving bias-independent SS. By defining "gatewindow", we propose a device model to demonstrate how similar slopes of thedrain DOS falling into the gate window can stabilize the SS under differentbias. This study underscores the significance of drain DOS engineering in thedesign of CS-FETs with bias-independent SS for portable electronicapplications.

Bias-Independent Subthreshold Swing in Nanoscale Cold-Source Field-Effect Transistors by Drain Density-of-States Engineering