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A new method for the experimental study of ionization loss of relativisticnegatively charged particles moving in a crystal in the channeling regime usinga semiconductor surface-barrier detector with smoothly tunable thickness of thedepleted layer is proposed. The ionization loss can only be measured in thedepleted layer of the detector. The thickness of the depleted layer in a flatsemiconductor detector can be smoothly regulated by the value of the biasvoltage of the detector. Therefore, the energy distribution of the ionizationloss of relativistic particles which cross the detector and move in thechanneling regime in the detector crystal can be measured along the path of theparticles at variation of the bias voltage of the detector. Ionization lossspectra should be different for channeling and nonchanneling particles, andboth fractions can be determined. The application of a Si surface-barrierdetector-target is considered. Measurements with such a detector would make itpossible to study: the energy distribution of ionization loss of channelingnegatively and positively charged particles; spatial distribution of ionizationloss as a function of the path length of channeling particles; the dechannelinglength of negatively charged particles; and to clear up the role ofrechanneling of the particles in the crystal. Comparison of experimental datawith calculations can help to develop a description of the dynamics of motionof negatively charged particles channeling in a crystal. A better understandingof the dechanneling length properties can be useful in the production ofpositrons and other particles such as neutrons by an electron beam in crystals,and in the development of crystalline undulators, and at a crystal-basedextraction of electron beams from a synchrotron.

Surface-barrier detector with smoothly tunable thickness of depleted  layer for study of ionization loss and dechanneling length of negatively  charged particles channeling in a crystal