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Electron-electron interactions in graphene are sufficiently strong to inducea correlated and momentum-conserving flow such that charge carriers behavesimilarly to the Hagen-Poiseuille flow of a classical fluid. In the currentwork, we investigate the electronic signatures of such a viscous charge flow inhigh-mobility graphene FETs. In two complementary measurement schemes, wemonitor differential resistance of graphene for different channel widths andfor different effective electron temperatures. By combining both approaches,the presence of viscous effects is verified in a temperature range startingfrom 178 K and extending up to room temperature. Our experimental findings aresupported by finite element calculations of the graphene channel, which alsoprovide design guidelines for device geometries that exhibit increased viscouseffects. The presence of viscous effects near room temperature opens up avenuesfor functional hydrodynamic devices such as geometric rectifiers like a Teslavalve and charge amplifiers based on electronic Venturi effect.

Electronic Poiseuille Flow in Hexagonal Boron Nitride Encapsulated Graphene FETs