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The unique physics found in moir\'e superlattices of twisted orlattice-mismatched atomic layers hold great promise for future quantumtechnologies. However, twisted configurations are typically thermodynamicallyunfavorable, making the accurate twist angle control in direct growthimplausible. While rotationally aligned moir\'e superlattices based onlattice-mismatched layers such as WSe2/WS2 can be synthesized, they lack thecritical tunability of the moir\'e period and the moir\'e formation mechanismsare not well-understood. Here, we report the scalable, thermodynamically drivenvan der Waals epitaxy of stable moir\'es with tunable period from 10 to 45nanometers, based on lattice mismatch engineering in two WSSe layers withadjustable chalcogens ratios. Contrarily to conventional epitaxy, where latticemismatch induced stress hinders high-quality growth, we reveal the key role ofbulk stress in moir\'e formation, as well as its unique interplay with edgestress in shaping the moir\'e growth modes. Moreover, the synthesizedsuperlattices display tunable interlayer, and moir\'e intralayer excitons. Ourstudies unveil the unique epitaxial science of moir\'e synthesis and lay thefoundations for moir\'e-based technologies.

Scalable van der Waals epitaxy of tunable moir\'e heterostructures