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Understanding the microscopic origin of the gate-controlled supercurrent(GCS) in superconducting nanobridges is crucial for engineering superconductingswitches suitable for a variety of electronic applications. The origin of GCSis controversial, and various mechanisms have been proposed to explain it. Inthis work, we have investigated the GCS in a Ta layer deposited on the surfaceof InAs nanowires. Comparison between switching current distributions atopposite gate polarities and between the gate dependence of two opposite sidegates with different nanowire$-$gate spacings shows that the GCS is determinedby the power dissipated by the gate leakage. We also found a substantialdifference between the influence of the gate and elevated bath temperature onthe magnetic field dependence of the supercurrent. Detailed analysis of theswitching dynamics at high gate voltages shows that the device is driven intothe multiple phase slips regime by high-energy fluctuations arising from theleakage current.

Signatures of gate-driven out of equilibrium superconductivity in Ta/InAs nanowires