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The interfacial oxidation level and thermodynamic properties of the MgO-basedperpendicular magnetic tunneling junctions are investigated. Thesymmetry-conserved tunneling effect depends sensitively on the MgO adatomenergy during the RF sputtering, as well as the thermal stability of thestructure during the post-growth thermal annealing. Two different failure modesof the magnetoresistance are highlighted, involving with the decay ofperpendicular magnetic anisotropy and destruction of coherent tunnelingchannels, respectively. Through the careful control of interfacial oxidationlevel and proper selection of the heavy metal layers, both perpendicularmagnetic anisotropy and tunneling magnetoresistance of the junctions can beincreased.

Interplay of symmetry-conserved tunneling, interfacial oxidation and perpendicular magnetic anisotropy in CoFeB/MgO-based junctions