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Magnetic tunnel junctions with wide band gap semiconductor ZnTe barrier werefabricated. A very low barrier height and sizable magnetoresistance wereobserved in the Fe/ZnTe/Fe junctions at room temperature. The nonlinear I-Vcharacteristic curve confirmed the observed magnetoresistance is due tospin-dependent tunneling effect. Temperature dependent study indicated that thetotal conductance of the junction is dominated by direct tunneling, with only asmall portion from the hopping conduction through the defect states inside thebarrier.

Spin-polarized transport in magnetic tunnel junctions with ZnTe barriers