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Nanoscale strain has emerged as a powerful tool for controlling single-photonemitters (SPEs) in atomically thin transition metal dichalcogenides (TMDCs)(1,2). However, quantum emitters in monolayer TMDCs are typically unstable inambient conditions. Multilayer two-dimensional (2D) TMDCs could be a solution,but they suffer from low quantum efficiency, resulting in low brightness of theSPEs. Here, we report the deterministic spatial localization of strain-inducedsingle-photon emitters in multilayer GaSe by nanopillar arrays. Thestrain-controlled quantum confinement effect introduces well-isolatedsub-bandgap photoluminescence and corresponding suppression of the broad bandedge photoluminescence. Clear photon-antibunching behavior is observed from thequantum dot-like GaSe sub-bandgap exciton emission at 3.5 Kelvin. Thestrain-dependent confinement potential and the brightness are found to bestrongly correlated, suggesting a promising route for tuning and controllingSPEs. The comprehensive investigations of strain-engineered GaSe SPEs provide asolid foundation for the development of 2D devices for quantum photonictechnologies.

Deterministic Localization of Strain-induced Single-photon Emitters in Multilayer GaSe