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We stabilize resistance of melt-quenched amorphous Ge2Sb2Te5 (a-GST) phasechange memory (PCM) line cells by substantially accelerating resistance driftand bringing it to a stop within a few minutes with application of highelectric field stresses. The acceleration of drift is clearly observable atelectric fields > 26 MV/m at all temperatures (85 K - 300 K) and is independentof the current forced through the device, which is a strong function oftemperature. The low-field (< 21 MV/m) I-V characteristics of the stabilizedcells measured in 85 K - 300 K range fit well to a 2D thermally-activatedhopping transport model, yielding hopping distances in the direction of thefield and activation energies ranging from 2 nm and 0.2 eV at 85 K to 6 nm and0.4 eV at 300 K. Hopping transport appears to be better aligned with the fielddirection at higher temperatures. The high-field current response to voltage issignificantly stronger and displays a distinctly different characteristic: thedifferential resistances at different temperatures extrapolate to a singlepoint (8.9x10-8 ohm.cm), comparable to the resistivity of copper at 60 K, at65.6 +/- 0.4 MV/m. The physical mechanisms that give rise to the substantialincrease in current in the high-field regime also accelerate resistance drift.We constructed field and temperature dependent conduction models based on theexperimental results and integrated it with our electro-thermal finite elementdevice simulation framework to analyze reset, set and read operations of PCMdevices.

Stopping Resistance Drift in Phase Change Memory Cells and Analysis of Charge Transport in Stable Amorphous Ge2Sb2Te5