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The long-term stability of halide perovskite solar cells (PSCs) remains thecritical problem of this photovoltaic technology. Different structural defectsformed in the thin-film perovskite films were considered as a main trigger forthe decomposition of the absorber and corrosion of the interfaces in the devicestructure. The changes in the stability performance of the PSCs require adetailed analysis of the defects generated under external stress (light andheat). Using admittance, deep-level transient spectroscopy (DLTS) and reverseDLTS we determined the evolution of the defect energy levels in p-i-n PCS undercontinuous light soaking stress. We compared the impact of the charged defectson the performance and long-term stability of the CsFAPbI3 based devices withand without Cl-doping. Despite the gain in the output performance of the PCSs,the devices with CsFAPbI3-xClx showed improved light soaking stability. The T80(time required to reduce initial efficiency by 20%) for Cl-doped PSCs was1280h, while for pure CsFAPbI3 based devices only 650h. Three different defectenergy levels were determined for different device configurations. We foundthat Cl-doping suppressed the formation of the antisite defects (IPb, IFA) andiodine interstitials (Ii). The changes in the defect's energy levels aftercontinuous light soaking stress were analyzed and discussed. The present workprovides new insights for the defect behavior of PSCs under continuous externalstress, revealing the physical-chemical impact of the Cl-additive strategy.

Deep-level transient spectroscopy of the charged defects in p-i-n perovskite solar cells induced by light-soaking