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Single photon emitters in two-dimensional (2D) hexagonal boron nitride (hBN)are promising solid-state quantum emitters for photonic applications andquantum networks. Despite their favorable properties, much is still unknownabout their characteristics and their atomic origin. We focus on two differentkinds of hBN samples that particularly lend themselves for integration withnanophotonic devices, multilayer nanoflakes produced by liquid phaseexfoliation (LPE) and a layer-engineered sample from hBN grown by chemicalvapour deposition (CVD). We investigate their inherent defects and fit theiremission properties to computationally simulated optical properties of likelycarbon-related defects. Thereby we compare and elucidate the properties indifferent sample types particularly suited for photonic quantum networks andnarrow down the origin of emitters found in these samples. Our work is thus animportant step towards harnessing the full potential of single photon emittersin hBN.

Properties of quantum emitters in different hBN sample types particularly suited for nanophotonic integration