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Low-defect-density Ge thin films are critical in Ge based optical devices(optical detectors, LEDs and Lasers) integrated with Si electronic devices forlow-cost, highly integrated photonic circuits. In this work, Ge thin filmsprepared by wet etching with four different solutions were studied in terms ofthe surface morphology, defect density and achievable thickness. Bothnanostrip-based solution (1:1:10) and HCl-based solution (1:1:5) were able towet-etch 535 micron thick bulk-Ge substrates to Ge films thinner than 10 micronwithin 53 hours. The corresponding RMS surface roughness was 32 nm for thenanostrip-based solution and 10 nm for the HCl-based solution. The good qualityof bulk-Ge was preserved before and after the etching process according to theHRXRD results. The low threading dislocation density of 6000-7000 cm-2 wasmaintained in the process of wet etching without introducing extra defects.This approach provides an inexpensive and convenient way to preparesub-10-micron thick Ge thin films, enabling future studies oflow-defect-density Ge-based devices such as photodetectors, LEDs, and lasers.

Sub-10-micron thick Ge thin films from bulk-Ge substrates via a wet etching method