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The stability of GFET devices is a major problem and needs a good passivationlayer for the same. Low cost and low-temperature sol-gel alumina passivationlayer-based GFETs is studied here with the goals to improve stability of thedevice and achieve high process yield. The process yield and device stabilityare explored for two different molarities of 0.1 M and 0.05 M. The parameterslike mobility, trap charge density, minimum conductivity plateau width andminimum conductivity are extracted to compare the stability of devices. Theresults indicate that GFETs with 0.1 M have problems of process yield due tocrack formation in the channel region post-annealing, where close to half ofthe devices are working, and also working devices are are not stable anddegrading very fast within a week's time. On the other hand, 0.05 M sol-gelAlumina-based sample exhibits 100$\%$ process yield with all working devicesand observed stable behavior for more than two months. Hence we propose anoptimized process recipe for a sol-gel Alumina-based passivation layer toachieve the best possible process yield and device stability for GFETs.

Process Yield and Device Stability Improvement for Sol-gel Alumina Passivation layer based GFETs