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RowHammer is a DRAM vulnerability that can cause bit errors in a victim DRAMrow solely by accessing its neighboring DRAM rows at a high-enough rate. Recentstudies demonstrate that new DRAM devices are becoming increasingly vulnerableto RowHammer, and many works demonstrate system-level attacks for privilegeescalation or information leakage. In this work, we perform the first rigorousfine-grained characterization and analysis of the correlation between RowHammerand temperature. We show that RowHammer is very sensitive to temperaturevariations, even if the variations are very small (e.g., $\pm 1$ {\deg}C). Weleverage two key observations from our analysis to spy on DRAM temperature: 1)RowHammer-induced bit error rate consistently increases (or decreases) as thetemperature increases, and 2) some DRAM cells that are vulnerable to RowHammerexhibit bit errors only at a particular temperature. Based on theseobservations, we propose a new RowHammer attack, called SpyHammer, that spieson the temperature of DRAM on critical systems such as industrial productionlines, vehicles, and medical systems. SpyHammer is the first practical attackthat can spy on DRAM temperature. Our evaluation in a controlled environmentshows that SpyHammer can infer the temperature of the victim DRAM modules withan error of less than $\pm 2.5$ {\deg}C at the 90th percentile of all testedtemperatures, for 12 real DRAM modules (120 DRAM chips) from four mainmanufacturers.

SpyHammer: Understanding and Exploiting RowHammer under Fine-Grained Temperature Variations