English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

With the advent of the Internet of Things, nanoelectronic devices ormemristors have been the subject of significant interest for use as newhardware security primitives. Among the several available memristors, BiFe$\rmO_{3}$ (BFO)-based electroforming-free memristors have attracted considerableattention due to their excellent properties, such as long retention time,self-rectification, intrinsic stochasticity, and fast switching. They have beenactively investigated for use in physical unclonable function (PUF) key storagemodules, artificial synapses in neural networks, nonvolatile resistiveswitches, and reconfigurable logic applications. In this work, we present aphysics-inspired 1D compact model of a BFO memristor to understand itsimplementation for such applications (mainly PUFs) and perform circuitsimulations. The resistive switching based on electric field-driven vacancymigration and intrinsic stochastic behaviour of the BFO memristor are modelledusing the cloud-in-a-cell scheme. The experimental current-voltagecharacteristics of the BFO memristor are successfully reproduced. The responseof the BFO memristor to changes in electrical properties, environmentalproperties (such as temperature) and stress are analyzed and consistent withexperimental results.

Physics inspired compact modelling of BiFeO$_3$ based memristors for hardware security applications