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Germanium (Ge) is increasingly used as a substrate for high-performanceoptoelectronic, photovoltaic, and electronic devices. These devices are usuallygrown on thick and rigid Ge substrates manufactured by classical waferingtechniques. Nanomembranes (NMs) provide an alternative to this approach whileoffering wafer-scale lateral dimensions, weight reduction, limitation of waste,and cost effectiveness. Herein, we introduce the Porous germanium EfficientEpitaxial LayEr Release (PEELER) process, which consists of the fabrication ofwafer-scale detachable monocrystalline Ge NMs on porous Ge (PGe) and substratereuse. We demonstrate monocrystalline Ge NMs with surface roughness below 1 nmon top of nanoengineered void layer enabling layer detachment. Furthermore,these Ge NMs exhibit compatibility with the growth of III-V materials.High-resolution transmission electron microscopy (HRTEM) characterization showsGe NMs crystallinity and high-resolution X-ray diffraction (HRXRD) reciprocalspace mapping endorses high-quality GaAs layers. Finally, we demonstrate thechemical reconditioning process of the Ge substrate, allowing its reuse, toproduce multiple free-standing NMs from a single parent wafer. The PEELERprocess significantly reduces the consumption of Ge during the fabricationprocess which paves the way for a new generation of low-cost flexibleoptoelectronics devices.

Wafer-scale detachable monocrystalline Germanium nanomembranes for the growth of III-V materials and substrate reuse