English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

The temperature dependence of experimental charge carrier mobility iscommonly used as a predictor of the dominant carrier scattering mechanism insemiconductors, particularly in thermoelectric applications. In this work, wecritically evaluate whether this practice is well founded. A review of 47state-of-the-art mobility calculations reveals no correlation between the majorscattering mechanism and the temperature trend of mobility. Instead, wedemonstrate that the phonon frequencies are the prevailing driving forcesbehind the temperature dependence and can cause it to vary between $T^{-1}$ to$T^{-3}$ even for an idealised material. To demonstrate this, we calculate themobility of 23,000 materials and review their temperature dependence, includingseparating the contributions from deformation, polar, and impurity scatteringmechanisms. We conclusively demonstrate that a temperature dependence of$T^{-1.5}$ is not a reliable indicator of deformation potential scattering. Ourwork highlights the potential pitfalls of predicting the major scattering typebased on the experimental mobility temperature trend alone.

The temperature-dependence of carrier mobility is not a reliable indicator of the dominant scattering mechanism