English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Memristors are an electronic device whose resistance depends on the voltagehistory that has been applied to its two terminals. Despite its clear advantageas a computational element, a suitable transport model is lacking for thespecial class of interface-based memristors. Here, we adapt the widely-usedYakopcic compact model by including transport equations relevant tointerface-type memristors. This model is able to reproduce the qualitativebehaviour measured upon Nb-doped SrTiO$_3$ memristive devices. Our analysisdemonstrates a direct correlation between the devices' characteristicparameters and those of our model. The model can clearly identify the chargetransport mechanism in different resistive states thus facilitating evaluationof the relevant parameters pertaining to resistive switching in interface-basedmemristors. One clear application of our study is its ability to inform thedesign and fabrication of related memristive devices.

A Compact Model of Interface-Type Memristors Linking Physical and Device Properties