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Neuromorphic computing (NC) is considered as a potential vehicle forimplementing energy-efficient artificial intelligence (AI). To realize NC,several materials systems are being investigated. Among them, the spin-orbittorque (SOT) -driven domain wall (DW) devices are one of the potentialcandidates. To implement these devices as neurons and synapses, the buildingblocks of NC, researchers have proposed different device designs. However, theexperimental realization of DW device-based NC is only at the primeval stage.In this study, we have proposed and investigated pine-tree-shaped DW devices,based on the Laplace force on the elastic DWs, for achieving the synapticfunctionalities. We have successfully observed multiple magnetization stateswhen the DW was driven by the SOT current. The key observation is theasymmetric pinning strength of the device when DW moves in two oppositedirections (defined as, xhard and xeasy). This shows the potential of these DWdevices as DW diodes. We have used micromagnetic simulations to understand theexperimental findings and to estimate the Laplace pressure for various designparameters. The study leads to the path of device fabrication, where synapticproperties are achieved with asymmetric pinning potential.

Diode Like Attributes in Magnetic Domain Wall Devices via Geometrical Pinning for Neuromorphic Computing