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Monolayer transition metal dichalcogenides (TMDs) have received greatattention due to their fascinating physical properties and their potential forapplications in novel semiconductor devices. However, the intrinsic physicalproperties of TMDs can be significantly altered by extrinsic disorders such assurface roughness and charge disorder induced by substrates. The encapsulationof TMDs using hexagonal boron nitride layers has been proposed as a practicalway to reduce substrate-induced disorders. Despite experimental advances, theexact role of hexagonal boron nitride encapsulation remains unclear in terms ofdefect physics in TMDs. Here, we found that h-BN encapsulation effectivelypassivates the defects of monolayer WS2 by anchoring the adsorbed oxygen atomsonto monolayer WS2 crystals. Due to defect passivation by h-BN encapsulation,the excess electron density in monolayer WS2 crystals is greatly lowered andstabilized, resulting in two orders of magnitude lower exciton annihilation bytrion conversion and Auger recombination processes. Furthermore, the valleypolarization becomes robust against the various excitation and ambientconditions in the h-BN encapsulated WS2 crystals. Our findings provide insightinto the role of h-BN encapsulation and the related excitonic properties of 2Dsemiconductors.

Hexagonal boron nitride encapsulation passivates defects in 2D materials