English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

We report the effect of remote surface optical (RSO) phonon scattering oncarrier mobility in monolayer graphene gated by ferroelectric oxide. Wefabricate monolayer graphene transistors back-gated by epitaxial (001)Ba$_{0.6}$Sr$_{0.4}$TiO$_{3}$ films, with field effect mobility up to 23,000cm$^{2}$V$^{-1}$s$^{-1}$ achieved. Switching the ferroelectric polarizationinduces nonvolatile modulation of resistance and quantum Hall effect ingraphene at low temperatures. Ellipsometry spectroscopy studies reveal fourpairs of optical phonon modes in Ba$_{0.6}$Sr$_{0.4}$TiO$_{3}$, from which weextract the RSO phonon frequencies. The temperature dependence of resistivityin graphene can be well accounted for by considering the scattering from theintrinsic longitudinal acoustic phonon and the RSO phonon, with the latterdominated by the mode at 35.8 meV. Our study reveals the room temperaturemobility limit of ferroelectric-gated graphene transistors imposed by RSOphonon scattering.

Remote Surface Optical Phonon Scattering in Ferroelectric Ba$_{0.6}$Sr$_{0.4}$TiO$_{3}$ Gated Graphene