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We demonstrate reduced surface recombination velocity (SRV) and enhancedpower-conversion efficiency (PCE) in mixed-cation mixed-halide perovskite solarcells by using (3-aminopropyl)trimethoxysilane (APTMS) as a surface passivator.We show the APTMS serves to passivate defects at the perovskite surface, whilealso decoupling the perovskite from detrimental interactions at the C60interface. We measure a SRV of ~125 + 14 cm/s, and a concomitant increase of~100 meV in quasi-Fermi level splitting in passivated devices compared to thecontrols. We use time-resolved photoluminescence and excitation-correlationphotoluminescence spectroscopy to show that APTMS passivation effectivelysuppresses non-radiative recombination. We show that APTMS improves both thefill factor and open-circuit voltage (VOC), increasing VOC from 1.03 V forcontrol devices to 1.09 V for APTMS-passivated devices, which leads to PCEincreasing from 15.90% to 18.03%. We attribute enhanced performance to reduceddefect density or suppressed nonradiative recombination and low SRV at theperovskite/transporting layers interface.

(3-Aminopropyl)trimethoxysilane Surface Passivation Improves Perovskite Solar Cell Performance by Reducing Surface Recombination Velocity