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We explore a solid state qubit defined on valley isospin of an electronconfined in a gate-defined quantum dot created in an area of monolayerMoS$_2$/WS$_2$ lateral junction, where a steep dipolar potential emerges. Weshow that the junction oriented along an armchair direction can induceintervalley transitions of the electron confined in the neighboring quantum dotwhen the (gate-controllable) overlapping with the junction is significant andpumping frequency tuned. The pumping scheme that induces transitions isall-electrical: obtained by applying oscillating voltages to control gates andthus enables for scalable qubit architectures. We also report anotherpossibility of valley-qubit manipulation by accumulating non-Abelian valleyBerry phase. To model nanodevice we solve the time-dependentSchr\"odinger-Poisson equations in a tight-binding approach and obtain exacttime-evolution of the valley-qubit system.

Electrical manipulation of valley-qubit and valley geometric phase in lateral monolayer heterostructures